FHX35LGT/619

Product Overview

FHX35LGT/619

(HEMT) High Electron Mobility Transistor


RF power amplifiers in cellular base stations and satellite communication systems exploit this HEMT’s high electron mobility to achieve low noise figure and efficient gain at microwave frequencies. The transistor’s superior switching speed makes it valuable for wideband signal processing in 4G and 5G infrastructure.

FHX35LGT/619 Integrated Circuits (I/C's) - NetSource Technology

Technical Resources

A green badge indicating an electronic component is RoHS Certified
A green badge indicating an electronic component is RoHS Certified

Inventory & Availability

FHX35LGT/619

A minimum order of $250.00 is required unless prior approval is granted.

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